Synthesis and characterization of atomically-thin graphite films on a silicon carbide substrate

摘要

This paper reports the synthesis and detailed characterization of graphitethin films produced by thermal decomposition of the (0001) face of a 6H-SiCwafer, demonstrating the successful growth of single crystalline films down toapproximately one graphene layer. The growth and characterization were carriedout in ultrahigh vacuum (UHV) conditions. The growth process and sample qualitywere monitored by low-energy electron diffraction, and the thickness of thesample was determined by core level x-ray photoelectron spectroscopy.High-resolution angle-resolved photoemission spectroscopy shows constant energymap patterns, which are very sharp and fully momentum-resolved, but nonethelessnot resolution limited. We discuss the implications of this observation inconnection with scanning electron microscopy data, as well as with previousstudies.